منابع مشابه
Compact Modelling in RF CMOS Technology
ii Declaration I hereby certify that this material, which I now submit for assessment on the programme of study leading to the award of Doctor of Philosophy is entirely my own work, that I have exercised reasonable care to ensure that the work is original, and does not to the best of my knowledge breach any law of copyright, and has not been taken from the work of others save and to the extent ...
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We discuss state of the art and new developments for the characterization of CMOS technologies. In the first chapter the most important issues of MOS transistor modeling will be shown. Topics like AC/DC modeling, noise modeling and temperature modeling for the MOS transistor will be explained. State of the art MOS transistor models like the BSIM3 and BSIM4 models as well as the newest surface p...
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The radio-frequency (rf) performance of a 0.18m CMOS logic technology is assessed by evaluating the cutoff and maximum oscillation frequencies ( and max) the minimum noise figure ( min) and associated power gain ( ) and the 1/ -noise of the devices. Gate-biasing and channel-length and gate-finger-length adjustments are identified as means to optimize the rf performance without any technology pr...
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A new 3-D solenoid-inductor structure that is compatible with standard CMOS technology is proposed. Simulation shows excellent area efficiency of more than 80% saving over conventional planar spiral inductor. If combined with post-micromaching, a peak quality factor greater than 10 at 30GHz can be realized.
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UWB (Ultra-Wideband) is one of the WPAN (Wireless Personal Area Network) Technologies; its main applications include imaging systems, vehicular radar systems and communications and measurement systems. Ever since the FCC released unlicensed spectrum of 3.1-10.6 GHz for UWB application in 2002, UWB has received significant interest from both industry and academia. Comparing with traditional narr...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 2000
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.120.10_1308